A COMPREHENSIVE STUDY OF DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED INP

被引：23

作者：

SLATER, M ^{[1
]}

KOSTIC, S ^{[1
]}

NOBES, MJ ^{[1
]}

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90593-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：429 / 432

页数：4

共 17 条

[1] FLUX, FLUENCE AND IMPLANTATION TEMPERATURE-DEPENDENCE OF DISORDER PRODUCED BY 40 KEV N+ ION IRRADIATION OF GAAS [J].

AHMED, NAG ;

CHRISTODOULIDES, CE ;

CARTER, G .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4) :211-224

[2]

AVVRAY P, 1982, J APPL PHYS, V53, P6202

[3] DETERMINATION OF IMPLANTED ELECTRICAL PROFILES BY A MICROWAVE CONTACTLESS METHOD - APPLICATION TO SELENIUM IMPLANTATION IN SEMI-INSULATING INP [J].

BELLEC, M ;

LECLEACH, X ;

FAVENNEC, PN ;

LHARIDON, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :629-635

[4] THE ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS [J].

CARTER, G ;

ELLIMAN, RG .

RADIATION EFFECTS LETTERS, 1983, 68 (05) :155-161

[5] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG .

SOLID-STATE ELECTRONICS, 1978, 21 (07) :981-985

[6] DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP [J].

KENNEDY, EF .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :375-377

[7]

KOSTIC S, UNPUB

[8] STUDY OF ION-IMPLANTATION DAMAGE IN GAAS-BE AND INP-BE USING RAMAN-SCATTERING [J].

RAO, CSR ;

SUNDARAM, S ;

SCHMIDT, RL ;

COMAS, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1808-1815

[9] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS [J].

SIGMUND, P .

APPLIED PHYSICS LETTERS, 1969, 14 (03) :114-&

[10]

SLATER M, 1984, UNPUB RAD EFFECTS

← 1 2 →