PROCESS DEPENDENCE OF HOLE TRAPPING IN THIN NITRIDED SIO2-FILMS

被引：16

作者：

SEVERI, M ^{[1
]}

DORI, L ^{[1
]}

IMPRONTA, M ^{[1
]}

GUERRI, S ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2447 / 2451

页数：5

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