HEAVILY SN-DOPED GAAS BUFFER LAYERS FOR ALGAAS/GAAS HBTS

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305

[3] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174

[4] COX RH, 1979, SOLID STATE ELECTRON, V22, P141

[5] NUCLEATION EFFECTS DURING MBE GROWTH OF SN-DOPED GAAS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (01): : 63 - 71

[6] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[7] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637

[8] SN INCORPORATION IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1760 - L1762

[9] LIEVIN JL, 1986, I PHYS C SER, V79, P595

[10] IMPROVED ALGAAS/GAAS HBT PERFORMANCE BY INGAAS EMITTER CAP LAYER [J]. ELECTRONICS LETTERS, 1987, 23 (11) : 566 - 568

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305

[3] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174

[4] COX RH, 1979, SOLID STATE ELECTRON, V22, P141

[5] NUCLEATION EFFECTS DURING MBE GROWTH OF SN-DOPED GAAS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (01): : 63 - 71

[6] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[7] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L635 - L637

[8] SN INCORPORATION IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11): : L1760 - L1762

[9] LIEVIN JL, 1986, I PHYS C SER, V79, P595

[10] IMPROVED ALGAAS/GAAS HBT PERFORMANCE BY INGAAS EMITTER CAP LAYER [J]. ELECTRONICS LETTERS, 1987, 23 (11) : 566 - 568