DETECTION OF AVALANCHING IN SUBMICROMETER FIELD-EFFECT DEVICES

被引：2

作者：

GUPTA, MS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 10期

关键词：

D O I：

10.1109/EDL.1987.26697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：469 / 471

页数：3

共 14 条

[1] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J].

BAECHTOLD, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :674-+

[2] ANALYSIS OF THE STATIONARY AND TRANSIENT AUTO-CORRELATION FUNCTION IN SEMICONDUCTORS [J].

BRUNETTI, R ;

JACOBONI, C .

PHYSICAL REVIEW B, 1984, 29 (10) :5739-5748

[3] THERMAL NOISE MEASUREMENTS IN GAAS-MESFETS [J].

FOLKES, PA .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :620-622

[4] NOISE TEMPERATURE IN GAAS EPI-LAYER FOR FETS [J].

GRAFFEUIL, J ;

SAUTEREAU, JF ;

BLASQUEZ, G ;

ROSSEL, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :596-599

[5]

GUPTA MS, 1987, IN PRESS 9TH P INT C

[6] FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J].

LEHOVEC, K ;

MILLER, RS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :273-281

[7] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[8] HOT, TEPID AND TEMPERATE ELECTRONS IN BULK GAAS [J].

MOGLESTUE, C .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1986, 133 (02) :35-46

[9] MEASUREMENTS OF MULTIPLICATION EFFECTS ON NOISE IN SILICON AVALANCHE DIODES [J].

NAQVI, IM ;

LEE, CA ;

DALMAN, GC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11) :2051-&

[10] NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].

STATZ, H ;

HAUS, HA ;

PUCEL, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) :549-562

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