ARSENIC DIFFUSION INTO SILICON FROM ELEMENTAL SOURCE

被引：5

作者：

OHKAWA, S ^{[1
]}

NAKAJIMA, Y ^{[1
]}

FUKUKAWA, Y ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI 211,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 04期

关键词：

D O I：

10.1143/JJAP.14.458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：458 / 465

页数：8

共 19 条

[1]

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[2]

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[3] THE DIFFUSIVITY OF ARSENIC IN SILICON [J].

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[4] DIFFUSION MODEL FOR ARSENIC IN SILICON [J].

CHIU, TL ;

GHOSH, HN .

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[5]

CHIU TL, 1970, APPL PHYS LETT, V17, P23

[6] A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE [J].

CHOU, S ;

DAVIDSON, LA ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :23-&

[7]

DEAL BE, 1966, J APPL PHYS, V42, P3193

[8] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279

[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[10] DONOR DIFFUSION DYNAMICS IN SILICON [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :397-+

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