IONIZATION-ENHANCED SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON WITH BORON IMPURITIES

被引：9

作者：

PARK, WW

BECKER, MF

WALSER, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期

关键词：

D O I：

10.1063/1.99117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1517 / 1519

页数：3

共 18 条

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[4]

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SIGMON, TW .

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[7]

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[8]

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[9] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8607-8614

[10] EFFECT OF PRESSURE ON THE SOLID-PHASE EPITAXIAL REGROWTH RATE OF SI [J].

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AZIZ, MJ ;

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POATE, JM ;

JACOBSON, DC ;

HULL, R .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :232-233

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