RESIST EXPOSURE CHARACTERISTICS BY A FOCUSED LOW-ENERGY ELECTRON-BEAM

[1] BARRAUD A, 1979, SOLID STATE TECHNOL, V22, P120

[2] 10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 38 - 40

[3] DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) : 970 - 976

[4] POLY (PHENYL METHACRYLATE-CO-METHACRYLIC ACID) AS A DRY-ETCHING DURABLE POSITIVE ELECTRON RESIST [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 518 - 524

[5] LOW-ENERGY PROTON-BEAM LITHOGRAPHY WITH A THIN OXYGEN-ETCH BARRIER LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2938 - 2944

[6] BEAM ENERGY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY - THE RANGE AND INTENSITY OF BACKSCATTERED EXPOSURE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 698 - 700

[7] AMORPHOUS-CARBON FILMS AS RESIST MASKS WITH HIGH REACTIVE ION ETCHING RESISTANCE FOR NANOMETER LITHOGRAPHY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (13) : 835 - 837

[8] ELECTRICALLY CONDUCTING 2-LAYER RESIST SYSTEM USING AMORPHOUS-CARBON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1755 - 1756

[9] MORITA M, 1985, J ELECTROCHEM SOC, V131, P2402

[10] POLASKO KJ, 1982, P SOC PHOTO-OPT INST, V333, P76

[1] BARRAUD A, 1979, SOLID STATE TECHNOL, V22, P120

[2] 10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 38 - 40

[3] DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) : 970 - 976

[4] POLY (PHENYL METHACRYLATE-CO-METHACRYLIC ACID) AS A DRY-ETCHING DURABLE POSITIVE ELECTRON RESIST [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 518 - 524

[5] LOW-ENERGY PROTON-BEAM LITHOGRAPHY WITH A THIN OXYGEN-ETCH BARRIER LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2938 - 2944

[6] BEAM ENERGY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY - THE RANGE AND INTENSITY OF BACKSCATTERED EXPOSURE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 698 - 700

[7] AMORPHOUS-CARBON FILMS AS RESIST MASKS WITH HIGH REACTIVE ION ETCHING RESISTANCE FOR NANOMETER LITHOGRAPHY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (13) : 835 - 837

[8] ELECTRICALLY CONDUCTING 2-LAYER RESIST SYSTEM USING AMORPHOUS-CARBON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1755 - 1756

[9] MORITA M, 1985, J ELECTROCHEM SOC, V131, P2402

[10] POLASKO KJ, 1982, P SOC PHOTO-OPT INST, V333, P76