PLANAR-STRUCTURE INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH PREFERENTIAL LATERAL EXTENDED GUARD RING FOR 1.0-1.6 MU-M WAVELENGTH OPTICAL COMMUNICATION USE

被引:44
作者
TAGUCHI, K [1 ]
TORIKAI, T [1 ]
SUGIMOTO, Y [1 ]
MAKITA, K [1 ]
ISHIHARA, H [1 ]
机构
[1] NEC CORP,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
关键词
D O I
10.1109/50.9980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical Communication Equipment
引用
收藏
页码:1643 / 1655
页数:13
相关论文
共 53 条
[11]   OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].
FORREST, SR ;
KIM, OK ;
SMITH, RG .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98
[12]   IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].
FORREST, SR ;
LEHENY, RF ;
NAHORY, RE ;
POLLACK, MA .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :322-325
[13]   GAINASP-INP AVALANCHE PHOTO-DIODES [J].
HURWITZ, CE ;
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489
[14]   PLANAR INP/INGAAS-APD WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO2 [J].
IKEDA, M ;
WAKITA, K ;
HATA, S ;
KONDO, S ;
KANBE, H .
ELECTRONICS LETTERS, 1983, 19 (02) :61-62
[15]   IMPACT IONIZATION RATIO IN IN0.73GA0.27AS0.57P0.43 [J].
ITO, M ;
KANEDA, T ;
NAKAJIMA, K ;
TOYOMA, Y ;
YAMAOKA, T ;
KOTANI, T .
ELECTRONICS LETTERS, 1978, 14 (14) :418-419
[16]   TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES [J].
ITO, M ;
KANEDA, T ;
NAKAJIMA, K ;
TOYAMA, Y ;
ANDO, H .
SOLID-STATE ELECTRONICS, 1981, 24 (05) :421-424
[17]   INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION [J].
KANBE, H ;
SUSA, N ;
NAKAGOME, H ;
ANDO, H .
ELECTRONICS LETTERS, 1980, 16 (05) :163-165
[18]   A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].
KIM, OK ;
FORREST, SR ;
BONNER, WA ;
SMITH, RG .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404
[19]   ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE [J].
LAW, HD ;
TOMASETTA, LR ;
NAKANO, K .
APPLIED PHYSICS LETTERS, 1978, 33 (11) :920-922
[20]  
LEE TP, 1979, IEEE J QUANTUM ELECT, V15, P30