MG+/O+ ION-IMPLANTATION IN GAAS/GAALAS HETEROSTRUCTURES

被引：1

作者：

DESCOUTS, B

DUHAMEL, N

GAO, Y

机构：

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

关键词：

D O I：

10.1051/jphyscol:1988492

中图分类号：

学科分类号：

摘要：

引用

页码：437 / 440

页数：4

共 10 条

[1] COLLECTOR-UP HBTS FABRICATED BY BE+ AND O+ ION IMPLANTATIONS [J].

ADACHI, S ;

ISHIBASHI, T .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :32-34

[2] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].

ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[3] SELECTIVE CARRIER REMOVAL USING OXYGEN IMPLANTATION IN GAAS [J].

BERTH, M ;

VENGER, C ;

MARTIN, GM .

ELECTRONICS LETTERS, 1981, 17 (23) :873-874

[4] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J].

CHANG, MF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

MILLER, DL .

ELECTRONICS LETTERS, 1986, 22 (22) :1173-1174

[5] UNIFORM P-TYPE DOPING PROFILES IN MG-24(+)-IMPLANTED, RAPIDLY ANNEALED GAAS/ALGAAS HETEROSTRUCTURES [J].

DESCOUTS, B ;

DUHAMEL, N ;

DAOUDKETATA, K ;

KRAUZ, P ;

GODEFROY, S .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :450-452

[6] COMPARISON OF ELECTRICAL AND ATOMIC PROFILES OF MG-24 AND ZN-64 IMPLANTED GAAS SAMPLES AND GAAS-GAALAS HETEROSTRUCTURES FOR BIPOLAR-TRANSISTOR APPLICATIONS [J].

DUHAMEL, N ;

DAOUDKETATA, K ;

DESCOUTS, B ;

KRAUZ, P ;

GAUNEAU, M ;

GODEFROY, S .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (06) :377-382

[7] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

[8] REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE [J].

FISCHER, R ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :359-362

[9] ZINC-ENHANCED BERYLLIUM REDISTRIBUTION IN GAAS/GAALAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

HOUSTON, PA ;

SHEPHERD, FR ;

SPRINGTHORPE, AJ ;

MANDEVILLE, P ;

MARGITTAI, A .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1219-1221

[10]

HALOGEN LAMPS FURNAC

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