DETERMINATION OF THE CAPTURE CROSS-SECTION AND DEGENERACY FACTOR OF SI-SIO2 INTERFACE STATES

被引：16

作者：

EADES, WD

SWANSON, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：988 / 990

页数：3

相关论文

共 12 条

[1] CAPTURE-CROSS-SECTION DETERMINATION BY TRANSIENT-CURRENT TRAP-FILLING EXPERIMENTS
BORSUK, JA
SWANSON, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6704 - 6712
[2] CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM
BORSUK, JA
SWANSON, RM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2217 - 2225
[3] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[4] ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES
FAHRNER, W
GOETZBERGER, A
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 16 - +
[5] USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY
JANSSENS, EJ
DECLERCK, GJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1696 - 1703
[6] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES
JOHNSON, NM
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 802 - 804
[7] JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421
[8] CHARACTERIZATION OF SURFACE-STATES IN MOS CAPACITORS BY A MODIFIED DLTS TECHNIQUE
KUMAR, V
IYER, SB
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 637 - 640
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] SENGUPTA D, 1983, PHYS STATUS SOLIDI A, V80, pK209