IMPROVEMENT IN THE THICKNESS UNIFORMITY OF SILICON-ON-INSULATOR LAYERS FORMED BY DUAL ELECTRON-BEAM RECRYSTALLIZATION

Simple modifications to the processing of the capping layer in structures used for the preparation of silicon-on-insulator films by liquid phase recrystallization using the dual electron beam method are shown to reduce nonuniformities in the recrystallized layers. A model has been developed to explain the nature of thickness variations in recrystallized layers in terms of the geometry of the starting structure, the condition of the capping layer and the recrystallization conditions.