HPSAC - A SILICIDED AMORPHOUS-SILICON CONTACT AND INTERCONNECT TECHNOLOGY FOR VLSI

被引：20

作者：

WONG, SS ^{[1
]}

CHEN, DC ^{[1
]}

MERCHANT, P ^{[1
]}

CASS, TR ^{[1
]}

AMANO, J ^{[1
]}

CHIU, KY ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,TECH STAFF,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：587 / 592

页数：6

共 21 条

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[9] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI [J].

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[10]

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