RESIDUAL DISORDER IN LOW-TEMPERATURE POLYCRYSTALLINE SILICON

被引：3

作者：

BUSTARRET, E

DENEUVILLE, A

GROSLEAU, R

BRUNEL, LC

BRUNEL, M

机构：

[1] UNIV MONTREAL,DEPT PHYS NUCL,MONTREAL H3C 3A7,QUEBEC,CANADA

[2] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

[3] CNRS,CRISTALLOG LAB,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 04期

关键词：

D O I：

10.1007/BF02653988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：673 / 687

页数：15

共 27 条

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