RADIATION-INDUCED INTERFACE STATES OF POLY-SI GATE MOS CAPACITORS USING LOW-TEMPERATURE GATE OXIDATION

被引：74

作者：

NARUKE, K

YOSHIDA, M

MAEGUCHI, K

TANGO, H

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4054 / 4058

页数：5

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