THE LOW-TEMPERATURE ANODIZATION OF SILICON IN A GASEOUS PLASMA

被引：11

作者：

BARLOW, KJ ^{[1
]}

TAYLOR, S ^{[1
]}

ECCLESTON, W ^{[1
]}

KIERMASZ, A ^{[1
]}

机构：

[1] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,ENGLAND

来源：

关键词：

D O I：

10.1109/16.30933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1279 / 1285

页数：7

共 17 条

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[2] BARLOW K, 1987, THESIS U LIVERPOOL
[3] IONIC SPECIES RESPONSIBLE FOR THE PLASMA ANODIZATION OF SILICON
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 57 - 59
[4] EFFECTS OF LOW-TEMPERATURE ANNEALING ON THE ELECTRICAL-PROPERTIES OF PLASMA GROWN OXIDES
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[J]. APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 47 - 51
[5] BEAL BE, 1965, J APPL PHYS, V36, P3770
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[8] FROMHOLD AT, 1980, J APPL PHYS, V57, P6377
[9] ANODIC-OXIDATION OF SI IN OXYGEN CHLORINE PLASMA
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 100 - 105
[10] HO VQ, 1980, IEEE T ELECTRON DEV, V27, P1436, DOI 10.1109/T-ED.1980.20053