LOW DARK CURRENT QUASI-SCHOTTKY BARRIER MSM-PHOTODIODE STRUCTURES ON N-GA0.47IN0.53AS WITH P+-GA0.47IN0.53AS CAP LAYER

被引：8

作者：

AVERIN, SV

KOHL, A

MULLER, R

KUSTERS, AM

WISSER, J

HEIME, K

机构：

[1] Institut für Halbleitertechnik RWTH Aachen, Templergra-ben JJ

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The p+-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga0.47In0.53As. The measured barrier height was PHI(Bn) = 0.52 V, the ideality factor n = 1.1 and average dark current density 2 mA/cm2. A rise time of 45 ps at lambda = 1.3-mu-m under 2 V bias was measured for an MSM photodiode with 3-mu-m finger width and finger gaps and an active area of 100 x 100-mu-m2.

引用

收藏

页码：992 / 995

页数：4

相关论文

共 15 条

[1]

AVERIN SV, 1991, 1ST P INT SOV FIB OP, V1, P140

[2] HIGH-SPEED GA0.47IN0.53AS MISIM PHOTODETECTORS WITH DIELECTRIC-ASSISTED SCHOTTKY BARRIERS [J].

CHAN, WK ;

CHANG, GK ;

BHAT, R ;

SCHLOTTER, NE ;

NGUYEN, CK .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (09) :417-419

[3] ENHANCEMENT OF EFFECTIVE SCHOTTKY-BARRIER HEIGHT ON NORMAL-TYPE INP [J].

HO, MC ;

HE, Y ;

CHIN, TP ;

LIANG, BW ;

TU, CW .

ELECTRONICS LETTERS, 1992, 28 (01) :68-71

[4] LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS [J].

ITO, M ;

WADA, O .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) :1073-1077

[5] GA0.47IN0.53AS METAL-SEMICONDUCTOR-METAL PHOTODIODES USING A LATTICE MISMATCHED AL0.4GA0.6AS SCHOTTKY ASSIST LAYER [J].

KIKUCHI, T ;

OHNO, H ;

HASEGAWA, H .

ELECTRONICS LETTERS, 1988, 24 (19) :1208-1210

[6] PSEUDOMORPHIC GAINP SCHOTTKY DIODE AND MSM DETECTOR ON INP [J].

LOUALICHE, S ;

LECORRE, A ;

GINUDI, A ;

HENRY, L ;

VAUDRY, C ;

CLEROT, F .

ELECTRONICS LETTERS, 1990, 26 (07) :487-488

[7] INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS [J].

MORGAN, DV ;

FREY, J .

ELECTRONICS LETTERS, 1978, 14 (23) :737-738

[8] METAL-SEMICONDUCTOR METAL PHOTODETECTOR USING FE-IMPLANTED IN0.53GA0.47AS [J].

RAO, MV ;

GULWADI, SM ;

HONG, WP ;

CANEAU, C ;

CHANG, GK ;

PAPANICOLAOU, N .

ELECTRONICS LETTERS, 1992, 28 (01) :46-47

[9] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :541-550

[10] AN INVESTIGATION OF THE OPTOELECTRONIC RESPONSE OF GAAS/INGAAS MSM PHOTODETECTORS [J].

SCHUMACHER, H ;

LEBLANC, HP ;

SOOLE, J ;

BHAT, R .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :607-609