ALUMINUM DEPOSITION ON LOW-TEMPERATURE GAAS

被引：11

作者：

KELLY, MK

TACHE, N

MARGARITONDO, G

KAHN, A

机构：

[1] UNIV WISCONSIN MADISON,DEPT PHYS,STOUGHTON,WI 53589

[2] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573996

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：882 / 883

页数：2

共 13 条

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[7] Kahn A., 1981, SOLID STATE COMMUN, V38, P1269
[8] PHOTOEMISSION-STUDY OF THE INTERACTION OF A1 WITH A GAAS (110) SURFACE
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[9] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES
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[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (06) : 420 - 423
[10] UNIFIED DEFECT MODEL AND BEYOND
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027

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