HIGHLY STABLE OPERATION OF ALGALNP/GALNP STRAINED MULTIQUANTUM WELL VISIBLE LASER-DIODES

被引：6

作者：

HASHIMOTO, J

KATSUYAMA, T

SHINKAI, J

YOSHIDA, I

HAYASHI, H

机构：

[1] Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama 244, 1, Taya-cho

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The long-term reliability of AlGaInP/GaInP strained multiquantum well (SMQW) lasers has been investigated. Highly stable operation with low operation current for more than 5500 h has been achieved under 50-degrees-C, 3 mW test conditions, without sudden or rapid failures due to strain induced defects. The estimated mean time to failure (MTTF) is 10 900 h, which is comparable to that of the conventional DH laser and long enough for practical use.

引用

页码：1329 / 1330

页数：2

共 9 条

[1] EFFECTS OF STRAINED-LAYER STRUCTURES ON THE THRESHOLD CURRENT-DENSITY OF ALGAINP/GAINP VISIBLE LASERS
HASHIMOTO, J
KATSUYAMA, T
SHINKAI, J
YOSHIDA, I
HAYASHI, H
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 879 - 880
[2] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORI, Y
SATO, H
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028
[3] LONG-TERM RELIABILITY TESTS FOR INGAAIP VISIBLE LASER-DIODES
ISHIKAWA, M
OKUDA, H
ITAYA, K
SHIOZAWA, H
UEMATSU, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (09): : 1615 - 1621
[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
[5] VERY LOW THRESHOLD CURRENT ALGAINP/GAXIN1-XP STRAINED SINGLE QUANTUM-WELL VISIBLE LASER DIODE
KATSUYAMA, T
YOSHIDA, I
SHINKAI, J
HASHIMOTO, J
HAYASHI, H
[J]. ELECTRONICS LETTERS, 1990, 26 (17) : 1375 - 1377
[6] HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES
KATSUYAMA, T
YOSHIDA, I
SHINKAI, J
HASHIMOTO, J
HAYASHI, H
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3351 - 3353
[7] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS
KOBAYASHI, K
KAWATA, S
GOMYO, A
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1985, 21 (20) : 931 - 932
[8] RELIABLE HIGH-POWER OPERATION OF INGAALP VISIBLE-LIGHT LASER-DIODES WITH STRAINED ACTIVE LAYER
NITTA, K
ITAYA, K
NISHIKAWA, Y
ISHIKAWA, M
OKAJIMA, M
HATAKOSHI, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3862 - 3864
[9] LOW THRESHOLD CURRENT-DENSITY (760 A/CM2) AND HIGH-POWER (45 MW) OPERATION OF STRAINED GA0.42IN0.58P MULTIQUANTUM WELL LASER-DIODES EMITTING AT 632 NM
VALSTER, A
VANDERPOEL, CJ
FINKE, MN
BOERMANS, MJB
[J]. ELECTRONICS LETTERS, 1992, 28 (02) : 144 - 145

← 1 →