INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON (100) SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

MAKIMOTO, T

KURISHIMA, K

KOBAYASHI, T

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期

关键词：

D O I：

10.1109/55.103610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT's), grown by metalogranic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.

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页码：369 / 371

页数：3

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