SPONTANEOUS APPEARANCE OF HIGH-INDEX FACETS DURING THE EVOLUTION OF STEP BUNCHING ON VICINAL GAAS(001)

被引：17

作者：

HATA, K

IKOMA, T

HIRAKAWA, K

OKANO, T

KAWAZU, A

UEDA, T

AKIYAMA, M

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

[2] OKI ELECT IND CO LTD,SEMICOND TECHNOL LAB,HACHIOJI,TOKYO 193,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of step bunching on vicinal GaAs(001) annealed at different temperatures in AsH3 and Hz ambient was studied by scanning tunneling microscopy. The results provided aspects of the evolution of step bunching from the initial to the final stage. We observed a appearance of additional step bunchings which have a peculiar azimuth of [210], [210], [310], and [310].

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页码：5601 / 5603

页数：3

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