SPONTANEOUS APPEARANCE OF HIGH-INDEX FACETS DURING THE EVOLUTION OF STEP BUNCHING ON VICINAL GAAS(001)

被引:17
作者
HATA, K
IKOMA, T
HIRAKAWA, K
OKANO, T
KAWAZU, A
UEDA, T
AKIYAMA, M
机构
[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN
[2] OKI ELECT IND CO LTD,SEMICOND TECHNOL LAB,HACHIOJI,TOKYO 193,JAPAN
关键词
D O I
10.1063/1.357165
中图分类号
O59 [应用物理学];
学科分类号
摘要
The evolution of step bunching on vicinal GaAs(001) annealed at different temperatures in AsH3 and Hz ambient was studied by scanning tunneling microscopy. The results provided aspects of the evolution of step bunching from the initial to the final stage. We observed a appearance of additional step bunchings which have a peculiar azimuth of [210], [210], [310], and [310].
引用
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页码:5601 / 5603
页数:3
相关论文
共 17 条
[1]   EVIDENCE FOR FACETS WITH (210) AZIMUTH IN MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS(001) SUBSTRATES [J].
BENISTY, H ;
BOCKENHOFF, E ;
TALNEAU, A .
APPLIED PHYSICS LETTERS, 1992, 60 (16) :1987-1989
[2]   EVOLUTION OF 3D GROWTH-PATTERNS ON NONPLANAR SUBSTRATES [J].
BOCKENHOFF, E ;
BENISTY, H .
JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) :619-632
[3]   NATURAL SUPERSTEP FORMED ON GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FUKUI, T ;
SAITO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (03) :L483-L485
[4]   OBSERVATION OF STEP BUNCHING ON VICINAL GAAS(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY [J].
HATA, K ;
KAWAZU, A ;
OKANO, T ;
UEDA, T ;
AKIYAMA, M .
APPLIED PHYSICS LETTERS, 1993, 63 (12) :1625-1627
[5]   NONRADIATIVE DARK REGIONS ALONG SURFACE RIPPLES IN GAP LPE LAYERS [J].
KAJIMURA, T ;
AIKI, K ;
UMEDA, J .
APPLIED PHYSICS LETTERS, 1977, 30 (10) :526-528
[6]   EQUILIBRIUM MULTIATOMIC STEP STRUCTURE OF GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KASU, M ;
KOBAYASHI, N .
APPLIED PHYSICS LETTERS, 1993, 62 (11) :1262-1264
[7]   MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY [J].
KASU, M ;
FUKUI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L864-L866
[8]   REFLECTION ELECTRON-MICROSCOPY STUDY OF STRUCTURAL TRANSFORMATIONS ON A CLEAN SILICON SURFACE IN SUBLIMATION, PHASE-TRANSITION AND HOMOEPITAXY [J].
LATYSHEV, AV ;
ASEEV, AL ;
KRASILNIKOV, AB ;
STENIN, SI .
SURFACE SCIENCE, 1990, 227 (1-2) :24-34
[9]   TRANSFORMATIONS ON CLEAN SI(111) STEPPED SURFACE DURING SUBLIMATION [J].
LATYSHEV, AV ;
ASEEV, AL ;
KRASILNIKOV, AB ;
STENIN, SI .
SURFACE SCIENCE, 1989, 213 (01) :157-169
[10]   SCANNING TUNNELING MICROSCOPY STUDY OF DIFFUSION, GROWTH, AND COARSENING OF SI ON SI (001) [J].
MO, YW ;
KARIOTIS, R ;
SWARTZENTRUBER, BS ;
WEBB, MB ;
LAGALLY, MG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :201-206