DUAL-ION-BEAM SPUTTER DEPOSITION OF TIN FILMS

被引：7

作者：

VALENTINI, A

QUARANTA, F

PENZA, M

VASANELLI, L

BATTAGLIN, G

机构：

[1] UNITA GNSM CISM,I-70126 BARI,ITALY

[2] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[3] UNITA GNSM CISM,I-73100 LECCE,ITALY

[4] DIPARTIMENTO CHIM FIS,I-30123 VENICE,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.347596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N2+ ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.

引用

页码：7360 / 7362

页数：3

共 15 条

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