ACHIEVEMENT OF HIGH-GAIN IN A MULTIPLE QUANTUM CHANNEL LATERAL HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：1

作者：

THORNTON, RL

MOSBY, WJ

CHUNG, HF

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe refinements in the geometry of a lateral heterojunction bipolar transistor that have allowed us to greatly improve the dc characteristics of these devices. By reducing the base dimensions to 0.35 μm and improving the abruptness of the grading at the base-emitter p-n junction, we have achieved maximum current gains in excess of 600.

引用

页码：1670 / 1672

页数：3

共 11 条

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