EXCITONIC TRANSITIONS AND EXCITON DAMPING PROCESSES IN INGAAS/INP

被引:130
作者
ZIELINSKI, E
SCHWEIZER, H
STREUBEL, K
EISELE, H
WEIMANN, G
机构
[1] STAND ELEKT LORENZ AG,RES CTR STUTTGART,D-7000 STUTTGART 40,FED REP GER
[2] DEUTSCH BUNDESPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
关键词
D O I
10.1063/1.336358
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2196 / 2204
页数:9
相关论文
共 49 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]   THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].
ASADA, M ;
ADAMS, AR ;
STUBKJAER, KE ;
SUEMATSU, Y ;
ITAYA, Y ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619
[3]   ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056
[4]   TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
AUVERGNE, D ;
CAMASSEL, J ;
MATHIEU, H ;
CARDONA, M .
PHYSICAL REVIEW B, 1974, 9 (12) :5168-5177
[5]   TEMPERATURE-DEPENDENCE OF BAND-GAP IN SEMICONDUCTORS [J].
BAUMANN, K .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (01) :K71-K74
[6]   THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS [J].
BISARO, R ;
MERENDA, P ;
PEARSALL, TP .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :100-102
[7]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[8]   TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
CAMASSEL, J ;
AUVERGNE, D .
PHYSICAL REVIEW B, 1975, 12 (08) :3258-3267
[9]  
CAMASSEL J, 1978, PHYS REV B, V17, P4718, DOI 10.1103/PhysRevB.17.4718