SURFACE CHARACTERIZATION OF INP USING PHOTOLUMINESCENCE

[11] KRAWCZYK S, 1984, ELECTRON LETT, V20, P657

[12] PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF INP SURFACE TREATED BY ACID AND BASE SOLUTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 870 - 872

[13] Langmann U., 1973, Applied Physics, V1, P219, DOI 10.1007/BF00884672

[14] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 1 - 3

[15] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 655 - 658

[16] PHOTOLUMINESCENCE AS A TOOL FOR STUDY OF ELECTRONIC SURFACE PROPERTIES OF GALLIUM-ARSENIDE [J]. APPLIED PHYSICS, 1977, 12 (01): : 75 - 82

[17] INFLUENCE OF THE NEAR-BAND-EDGE SURFACE-STATES ON THE LUMINESCENCE EFFICIENCY OF INP [J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1362 - 1364

[18] AMBIENT GAS INFLUENCE ON PHOTO-LUMINESCENCE INTENSITY FROM INP AND GAAS CLEAVED SURFACES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 312 - 314

[19] PROPERTIES OF AMBIENT-ENHANCED PHOTO-LUMINESCENCE FROM INP AND GAAS-SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5446 - 5448

[20] SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1544 - 1545

[11] KRAWCZYK S, 1984, ELECTRON LETT, V20, P657

[12] PHOTOLUMINESCENCE AND X-RAY PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF INP SURFACE TREATED BY ACID AND BASE SOLUTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 870 - 872

[13] Langmann U., 1973, Applied Physics, V1, P219, DOI 10.1007/BF00884672

[14] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 1 - 3

[15] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 655 - 658

[16] PHOTOLUMINESCENCE AS A TOOL FOR STUDY OF ELECTRONIC SURFACE PROPERTIES OF GALLIUM-ARSENIDE [J]. APPLIED PHYSICS, 1977, 12 (01): : 75 - 82

[17] INFLUENCE OF THE NEAR-BAND-EDGE SURFACE-STATES ON THE LUMINESCENCE EFFICIENCY OF INP [J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1362 - 1364

[18] AMBIENT GAS INFLUENCE ON PHOTO-LUMINESCENCE INTENSITY FROM INP AND GAAS CLEAVED SURFACES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 312 - 314

[19] PROPERTIES OF AMBIENT-ENHANCED PHOTO-LUMINESCENCE FROM INP AND GAAS-SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5446 - 5448

[20] SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1544 - 1545