INTERACTION OF TISI2 LAYERS WITH POLYCRYSTALLINE SI

被引：32

作者：

ZHENG, LR ^{[1
]}

HUNG, LS ^{[1
]}

FENG, SQ ^{[1
]}

REVESZ, P ^{[1
]}

MAYER, JW ^{[1
]}

MILES, G ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.96715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：767 / 769

页数：3

共 12 条

[1] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

[2]

MOFFATT WG, 1984, HDB BINARY PHASE DIA

[3] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J].

MURARKA, SP ;

READ, MH ;

DOHERTY, CJ ;

FRASER, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :293-301

[4] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :474-482

[5]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[6] INTERACTION OF METAL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

OLOWOLAFE, JO ;

LAU, SS ;

NICOLET, MA ;

MAYER, JW ;

SHIMA, R .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1278-1283

[7] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

NICOLET, MA ;

MAYER, JW ;

BLATTNER, RJ ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4678-4684

[8]

QUWENS CD, 1975, APPL PHYS LETT, V26, P569

[9] RECRYSTALLIZATION OF POLYCRYSTALLINE CVD GROWN SILICON [J].

SCHINS, WJH ;

BEZEMER, J ;

HOLTROP, H ;

RADELAAR, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1193-1199

[10] SILICIDE-SILICON INTERFACE DEGRADATION DURING TITANIUM SILICIDE POLYSILICON OXIDATION [J].

TANIELIAN, M ;

LAJOS, R ;

BLACKSTONE, S ;

PRAMANIK, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1456-1460

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