LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF METALS FOR MICROELECTRONICS TECHNOLOGY

被引:52
作者
BAUM, TH
COMITA, PB
机构
[1] IBM Almaden Research Center, San Jose, CA 95120-6099
关键词
D O I
10.1016/0040-6090(92)90907-S
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Laser-induced chemical vapor deposition of high-purity metals has been applied to a wide variety of microelectronics applications. The ability to selectively produce thin metallic films with good electrical properties, in a well defined and controlled manner, has been a major goal of research in this area. An understanding of the laser deposition process, such as the laser-surface interaction and the decomposition chemistry of the metal precursor, is critical. In recent years, a greater understanding of the fundamental processes has been gained and great progress has been made in the design and optimization of precursors for the deposition of high-purity metals. The ability to deposit conducting metals has enabled specific applications to be addressed. The most promising applications are the laser-induced repair of "open" circuit defects, laser-induced deposition of interconnects for customization of circuits and the repair of "clear" defects in lithographic masks. Further, using laser-induced deposition for the testing of early engineering designs and the customization of limited-volume microelectronic components may provide a cost-effective alternative to conventional lithographic processes.
引用
收藏
页码:80 / 94
页数:15
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