PRECIPITATION OF OXYGEN IN SINGLE-CRYSTAL SILICON IMPLANTED WITH HIGH-DOSES OF OXYGEN

被引:7
作者
HEMMENT, PLF
MAYDELLONDRUSZ, EA
CASTLE, JE
PAYNTER, R
WILSON, MC
BOOKER, RG
KILNER, JA
ARROWSMITH, RP
机构
[1] UNIV SURREY,DEPT MET & MAT TECHNOL,GUILDFORD GU2 5XH,SURREY,ENGLAND
[2] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND
[3] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,ROYAL SCH MINES,LONDON SW7 2AZ,ENGLAND
[4] BRITISH TELECOM,RES LABS,IPSWICH,SUFFOLK,ENGLAND
关键词
D O I
10.1016/0040-6090(85)90340-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SEMICONDUCTING SILICON
引用
收藏
页码:125 / 131
页数:7
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