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HIGH-PRESSURE THERMAL-OXIDATION OF N-GAAS IN AN ATMOSPHERE OF OXYGEN AND WATER-VAPOR
被引:17
作者
:
BASU, N
论文数:
0
引用数:
0
h-index:
0
BASU, N
BHAT, KN
论文数:
0
引用数:
0
h-index:
0
BHAT, KN
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1988年
/ 63卷
/ 11期
关键词
:
D O I
:
10.1063/1.340325
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:5500 / 5506
页数:7
相关论文
共 12 条
[1]
THERMAL-OXIDATION OF GAAS
[J].
BUTCHER, DN
论文数:
0
引用数:
0
h-index:
0
BUTCHER, DN
;
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
SEALY, BJ
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1978,
11
(10)
:1451
-1456
[2]
PLASMA OXIDATION OF GAAS
[J].
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
;
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
.
APPLIED PHYSICS LETTERS,
1976,
29
(01)
:56
-58
[3]
MECHANISM OF GAAS ANODIZATION
[J].
COLEMAN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
COLEMAN, DJ
;
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
SHAW, DW
;
DOBROTT, RD
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
DOBROTT, RD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(02)
:239
-241
[4]
Ghandhi S.K, 1995, VLSI FABRICATION PRI
[5]
INTERFACE-STATE BAND MODEL FOR GAAS AND GAP ANODIC MOS STRUCTURES
[J].
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
HASEGAWA, H
;
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
SAWADA, T
;
SAKAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
SAKAI, T
.
SURFACE SCIENCE,
1979,
86
(JUL)
:819
-825
[6]
NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
[J].
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
HASEGAWA, H
;
FORWARD, KE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
FORWARD, KE
;
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
HARTNAGEL, HL
.
APPLIED PHYSICS LETTERS,
1975,
26
(10)
:567
-569
[7]
ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES
[J].
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, H
;
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
SAWADA, T
.
THIN SOLID FILMS,
1983,
103
(1-2)
:119
-140
[8]
THERMAL OXIDATION OF GAAS
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MURARKA, SP
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:180
-181
[9]
KINETICS OF HIGH-PRESSURE OXIDATION OF SILICON IN PYROGENIC STEAM
[J].
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
RAZOUK, RR
;
LIE, LN
论文数:
0
引用数:
0
h-index:
0
LIE, LN
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(10)
:2214
-2220
[10]
INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDE
[J].
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
SAWADA, T
;
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
HASEGAWA, H
.
THIN SOLID FILMS,
1979,
56
(1-2)
:183
-200
←
1
2
→
共 12 条
[1]
THERMAL-OXIDATION OF GAAS
[J].
BUTCHER, DN
论文数:
0
引用数:
0
h-index:
0
BUTCHER, DN
;
SEALY, BJ
论文数:
0
引用数:
0
h-index:
0
SEALY, BJ
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1978,
11
(10)
:1451
-1456
[2]
PLASMA OXIDATION OF GAAS
[J].
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, RPH
;
SINHA, AK
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SINHA, AK
.
APPLIED PHYSICS LETTERS,
1976,
29
(01)
:56
-58
[3]
MECHANISM OF GAAS ANODIZATION
[J].
COLEMAN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
COLEMAN, DJ
;
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
SHAW, DW
;
DOBROTT, RD
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222
DOBROTT, RD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(02)
:239
-241
[4]
Ghandhi S.K, 1995, VLSI FABRICATION PRI
[5]
INTERFACE-STATE BAND MODEL FOR GAAS AND GAP ANODIC MOS STRUCTURES
[J].
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
HASEGAWA, H
;
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
SAWADA, T
;
SAKAI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
SAKAI, T
.
SURFACE SCIENCE,
1979,
86
(JUL)
:819
-825
[6]
NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
[J].
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
HASEGAWA, H
;
FORWARD, KE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
FORWARD, KE
;
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, MERZ LABS, NEWCASTLE NE1 7RU, ENGLAND
HARTNAGEL, HL
.
APPLIED PHYSICS LETTERS,
1975,
26
(10)
:567
-569
[7]
ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES
[J].
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, H
;
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
SAWADA, T
.
THIN SOLID FILMS,
1983,
103
(1-2)
:119
-140
[8]
THERMAL OXIDATION OF GAAS
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MURARKA, SP
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:180
-181
[9]
KINETICS OF HIGH-PRESSURE OXIDATION OF SILICON IN PYROGENIC STEAM
[J].
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
RAZOUK, RR
;
LIE, LN
论文数:
0
引用数:
0
h-index:
0
LIE, LN
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(10)
:2214
-2220
[10]
INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDE
[J].
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
SAWADA, T
;
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo
HASEGAWA, H
.
THIN SOLID FILMS,
1979,
56
(1-2)
:183
-200
←
1
2
→