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CVD-SIO2 AND PLASMA-SINX FILMS AS ZN DIFFUSION MASKS FOR GAAS
被引:14
作者
:
BLAAUW, C
论文数:
0
引用数:
0
h-index:
0
BLAAUW, C
SPRINGTHORPE, AJ
论文数:
0
引用数:
0
h-index:
0
SPRINGTHORPE, AJ
DZIOBA, S
论文数:
0
引用数:
0
h-index:
0
DZIOBA, S
EMMERSTORFER, B
论文数:
0
引用数:
0
h-index:
0
EMMERSTORFER, B
机构
:
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1984年
/ 13卷
/ 02期
关键词
:
D O I
:
10.1007/BF02656678
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:251 / 262
页数:12
相关论文
共 22 条
[1]
LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(07)
: 410
-
415
[2]
STRESS IN CHEMICAL-VAPOR-DEPOSITED SIO2 AND PLASMA-SINX FILMS ON GAAS AND SI
BLAAUW, C
论文数:
0
引用数:
0
h-index:
0
BLAAUW, C
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
: 5064
-
5068
[3]
CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE
INADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
INADA, T
OHKUBO, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
OHKUBO, T
SAWADA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
SAWADA, S
HARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
HARA, T
NAKAJIMA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
NAKAJIMA, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(09)
: 1525
-
1529
[4]
USE OF LOW-TEMPERATURE DEPOSITED SILICON DIOXIDE FILMS AS DIFFUSION MASKS IN GAAS
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
DAVERN, W
论文数:
0
引用数:
0
h-index:
0
DAVERN, W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(01)
: 120
-
122
[5]
ANALYSIS OF IMPURITY ATOM DISTRIBUTION NEAR DIFFUSION MASK FOR A PLANAR P-N JUNCTION
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(03)
: 179
-
&
[6]
KERN W, 1976, RCA REV, V37, P55
[7]
XPS STUDY OF ANNEALED SIO2/GAAS INTERFACES
KONIG, U
论文数:
0
引用数:
0
h-index:
0
KONIG, U
SASSE, E
论文数:
0
引用数:
0
h-index:
0
SASSE, E
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(04)
: 950
-
952
[8]
WATER-ABSORPTION AND DENSIFICATION OF PHOSPHOSILICATE GLASS-FILMS
LEVIN, RM
论文数:
0
引用数:
0
h-index:
0
LEVIN, RM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(08)
: 1765
-
1770
[9]
REACTIONS OF GALLIUM ARSENIDE WITH WATER VAPOR AND HYDROGEN CHLORIDE GAS
MICHELITSCH, M
论文数:
0
引用数:
0
h-index:
0
MICHELITSCH, M
KAPPALLO, W
论文数:
0
引用数:
0
h-index:
0
KAPPALLO, W
HELLBARDT, G
论文数:
0
引用数:
0
h-index:
0
HELLBARDT, G
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(11)
: 1248
-
1253
[10]
DIFFUSION OF GALLIUM IN QUARTZ AND BULK-FUSED SILICA
MIZUTANI, S
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
MIZUTANI, S
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
OHDOMARI, I
MIYAZAWA, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
MIYAZAWA, T
IWAMORI, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
IWAMORI, T
KIMURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
KIMURA, I
YONEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
YONEDA, K
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(03)
: 1470
-
1473
←
1
2
3
→
共 22 条
[1]
LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(07)
: 410
-
415
[2]
STRESS IN CHEMICAL-VAPOR-DEPOSITED SIO2 AND PLASMA-SINX FILMS ON GAAS AND SI
BLAAUW, C
论文数:
0
引用数:
0
h-index:
0
BLAAUW, C
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
: 5064
-
5068
[3]
CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE
INADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
INADA, T
OHKUBO, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
OHKUBO, T
SAWADA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
SAWADA, S
HARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
HARA, T
NAKAJIMA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN
NAKAJIMA, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(09)
: 1525
-
1529
[4]
USE OF LOW-TEMPERATURE DEPOSITED SILICON DIOXIDE FILMS AS DIFFUSION MASKS IN GAAS
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
DAVERN, W
论文数:
0
引用数:
0
h-index:
0
DAVERN, W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(01)
: 120
-
122
[5]
ANALYSIS OF IMPURITY ATOM DISTRIBUTION NEAR DIFFUSION MASK FOR A PLANAR P-N JUNCTION
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1965,
9
(03)
: 179
-
&
[6]
KERN W, 1976, RCA REV, V37, P55
[7]
XPS STUDY OF ANNEALED SIO2/GAAS INTERFACES
KONIG, U
论文数:
0
引用数:
0
h-index:
0
KONIG, U
SASSE, E
论文数:
0
引用数:
0
h-index:
0
SASSE, E
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(04)
: 950
-
952
[8]
WATER-ABSORPTION AND DENSIFICATION OF PHOSPHOSILICATE GLASS-FILMS
LEVIN, RM
论文数:
0
引用数:
0
h-index:
0
LEVIN, RM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(08)
: 1765
-
1770
[9]
REACTIONS OF GALLIUM ARSENIDE WITH WATER VAPOR AND HYDROGEN CHLORIDE GAS
MICHELITSCH, M
论文数:
0
引用数:
0
h-index:
0
MICHELITSCH, M
KAPPALLO, W
论文数:
0
引用数:
0
h-index:
0
KAPPALLO, W
HELLBARDT, G
论文数:
0
引用数:
0
h-index:
0
HELLBARDT, G
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(11)
: 1248
-
1253
[10]
DIFFUSION OF GALLIUM IN QUARTZ AND BULK-FUSED SILICA
MIZUTANI, S
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
MIZUTANI, S
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
OHDOMARI, I
MIYAZAWA, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
MIYAZAWA, T
IWAMORI, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
IWAMORI, T
KIMURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
KIMURA, I
YONEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
YONEDA, K
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(03)
: 1470
-
1473
←
1
2
3
→