LOW-TEMPERATURE HOMOEPITAXIAL FILM GROWTH OF SI BY REACTIVE ION-BEAM DEPOSITION

被引：18

作者：

YAMADA, H

TORII, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：702 / 707

页数：6

共 28 条

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