SIO2/INP INTERFACES WITH REDUCED INTERFACE STATE DENSITY

被引：8

作者：

WAGER, JF

CLARK, MD

JULLENS, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：584 / 587

页数：4

共 10 条

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