ANALYSIS OF LIGHT AND CURRENT INDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：16

作者：

YAMAGISHI, H

KIDA, H

KAMADA, T

OKAMOTO, H

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：860 / 862

页数：3

相关论文

共 22 条

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON
ADLER, D
[J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148
[2] DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD
DRESNER, J
SZOSTAK, DJ
GOLDSTEIN, B
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 998 - 999
[3] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY
HAN, D
FRITZSCHE, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 397 - 400
[4] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON
HIRABAYASHI, I
MORIGAKI, K
NITTA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L357 - L360
[5] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[6] HIGH-QUALITY A-SI FILM PRODUCED BY HORIZONTAL PLASMA FURNACE
KASHIMA, Y
NONOMURA, S
KIDA, H
FUKUMOTO, K
OKAMOTO, H
HAMAKAWA, Y
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 755 - 758
[7] KIDA H, 1984, INT PHOTOVOLTAIC SCI, P417
[8] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON
LANG, DV
COHEN, JD
HARBISON, JP
SERGENT, AM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476
[9] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES
MORIGAKI, K
HIRABAYASHI, I
NAKAYAMA, M
NITTA, S
SHIMAKAWA, K
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (08) : 851 - 856
[10] A STUDY OF BUILT-IN POTENTIAL IN ALPHA-SI SOLAR-CELLS BY MEANS OF BACK-SURFACE REFLECTED ELECTRO-ABSORPTION
NONOMURA, S
OKAMOTO, H
HAMAKAWA, Y
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (01): : 31 - 38