CONTROL OF TITANIUM-SILICON AND SILICON DIOXIDE REACTIONS BY LOW-TEMPERATURE RAPID THERMAL ANNEALING

被引：10

作者：

BRILLSON, LJ ^{[1
]}

SLADE, ML ^{[1
]}

RICHTER, HW ^{[1
]}

VANDERPLAS, H ^{[1
]}

FULKS, RT ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.96386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1080 / 1082

页数：3

共 15 条

[11] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J].

POWELL, RA ;

CHOW, R ;

THRIDANDAM, C ;

FULKS, RT ;

BLECH, IA ;

PAN, JDT .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :380-382

[12] TITANIUM DISILICIDE FORMATION BY SPUTTERING OF TITANIUM ON HEATED SILICON SUBSTRATE [J].

TANIELIAN, M ;

BLACKSTONE, S .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :673-675

[13] SPUTTER DEPOSITED TITANIUM DISILICIDE AT HIGH SUBSTRATE TEMPERATURES [J].

TANIELIAN, M ;

BLACKSTONE, S ;

LAJOS, R .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :444-446

[14] SILICIDE AND SCHOTTKY-BARRIER FORMATION IN THE TI-SI AND THE TI-SIOX-SI SYSTEMS [J].

TAUBENBLATT, MA ;

HELMS, CR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6308-6315

[15] FORMATION OF TITANIUM SILICIDES BY FAST RADIATIVE PROCESSING [J].

WEI, CS ;

VANDERSPIEGEL, J ;

SANTIAGO, JJ ;

SEIBERLING, LE .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :527-528

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