IDENTIFICATION OF THE ARSENIC VACANCY DEFECT IN ELECTRON-IRRADIATED GAAS

被引：24

作者：

VONBARDELEBEN, HJ

BOURGOIN, JC

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2890

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2890 / 2892

页数：3

共 11 条

[1]

BARAFF GA, UNPUB

[2] ELECTRONIC SPIN OF THE GA VACANCY IN GAP [J].

KENNEDY, TA ;

WILSEY, ND ;

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW LETTERS, 1983, 50 (17) :1281-1284

[3] ELECTRON-PARAMAGNETIC RESONANCE IDENTIFICATION OF THE PHOSPHORUS ANTISITE IN ELECTRON-IRRADIATED INP [J].

KENNEDY, TA ;

WILSEY, ND .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1089-1091

[4]

KIMMERLING LC, 1985, 13TH P INT C DEF SEM

[5] CREDIBILITY OF DIFFERENT CALCULATIONAL SCHEMES FOR DEFECTS IN SEMICONDUCTORS - THEIR POWER AND THEIR LIMITS [J].

LANNOO, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (18) :3137-3156

[6] THEORETICAL DISCUSSION OF DEEP LEVEL OPTICAL AND THERMAL SPECTROSCOPY IN SEMICONDUCTORS - APPLICATION TO E-1 AND E-2 IN GAAS [J].

LOUALICHE, S ;

NOUAILHAT, A ;

LANNOO, M .

SOLID STATE COMMUNICATIONS, 1984, 51 (07) :509-513

[7] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[8] IDENTIFICATION OF THE PHOSPHOR VACANCY DEFECT IN ELECTRON-IRRADIATED P-TYPE INP [J].

VONBARDELEBEN, HJ .

SOLID STATE COMMUNICATIONS, 1986, 57 (02) :137-139

[9] IDENTIFICATION OF EL2 IN GAAS [J].

VONBARDELEBEN, HJ ;

STIEVENARD, D ;

BOURGOIN, JC ;

HUBER, A .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :970-972

[10] FORMATION OF ASGA ANTISITE DEFECTS IN ELECTRON-IRRADIATED GAAS [J].

VONBARDELEBEN, HJ ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1041-1043

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