THRESHOLD VOLTAGE SHIFT OF N-CHANNEL SI-GATE MOSFETS

[11] THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1319 - +

[12] EFFECT OF OXIDE THICKNESS ON THRESHOLD VOLTAGE OF BORON ION-IMPLANTED MOSFET [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 999 - 1001

[13] MOS FIELD THRESHOLD INCREASE BY PHOSPHORUS-IMPLANTED FIELD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (05) : 473 - 481

[14] SATO K, 1972, TOSHIBA REV, V27, P1123

[15] MOS THRESHOLD SHIFTING BY ION-IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1217 - 1232

[16] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 146 - +

[17] SHIFT OF GATE THRESHOLD VOLTAGE OF MOS TRANSISTORS DNE TO INTRODUCTION OF SHALLOW IMPURITIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) : 84 - +

[18] WOLF HF, 1969, SILICON SEMICONDUCTO, P141

[11] THRESHOLD SHIFT CALCULATIONS FOR ION IMPLANTED MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1319 - +

[12] EFFECT OF OXIDE THICKNESS ON THRESHOLD VOLTAGE OF BORON ION-IMPLANTED MOSFET [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 999 - 1001

[13] MOS FIELD THRESHOLD INCREASE BY PHOSPHORUS-IMPLANTED FIELD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (05) : 473 - 481

[14] SATO K, 1972, TOSHIBA REV, V27, P1123

[15] MOS THRESHOLD SHIFTING BY ION-IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1217 - 1232

[16] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 146 - +

[17] SHIFT OF GATE THRESHOLD VOLTAGE OF MOS TRANSISTORS DNE TO INTRODUCTION OF SHALLOW IMPURITIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) : 84 - +

[18] WOLF HF, 1969, SILICON SEMICONDUCTO, P141