INFLUENCE OF PROTON IMPLANTATION ON THE PROPERTIES OF CUINSE2 SINGLE-CRYSTALS (II)

被引：21

作者：

YAKUSHEV, MV ^{[1
]}

NEUMANN, H ^{[1
]}

TOMLINSON, RD ^{[1
]}

RIMMER, P ^{[1
]}

LIPPOLD, G ^{[1
]}

机构：

[1] UNIV LEIPZIG, FACHBEREICH PHYS, D-04103 LEIPZIG, GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1994年 / 29卷 / 03期

关键词：

D O I：

10.1002/crat.2170290328

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Copper deficient p-type conducting CuInSe2 single crystals were implanted with 40 keV protons in the fluence range from 2.5 . 10(14) to 1.5 . 10(16) cm-2. Over the whole fluence range the implanted layers were n-type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100-degrees-C.

引用

页码：417 / 426

页数：10

共 53 条

[1] HYDROGEN INCORPORATION BEHAVIOR AND RADIATION-DAMAGE IN PROTON BOMBARDED INP SINGLE-CRYSTALS [J].

ASCHERON, C ;

RIEDE, V ;

SOBOTTA, H ;

NEUMANN, H .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 115 (1-3) :145-155

[2]

ASCHERON C, 1987, NUCL INSTRUM METH B, V28, P35

[3] A DLTS ANALYSIS OF ELECTRON AND HOLE TRAPS IN PROTON IMPLANTED VPE GROWN N-GAAS USING SCHOTTKY-BARRIER DIODES [J].

AURET, FD ;

NEL, M ;

SNYMAN, HC .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 105 (3-4) :225-237

[4] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[5] PASSIVATION OF BULK TRAPPING LEVELS IN CADMIUM TELLURIDE BY PROTON IMPLANTATION [J].

BIGLARI, B ;

SAMIMI, M ;

HAGEALI, M ;

KOEBEL, JM ;

SIFFERT, P .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1112-1117

[6] PHASE STUDY OF THE SYSTEM CU1-XLIXINSE2 [J].

BOEHNKE, UC ;

NEUMANN, H ;

KUHN, G .

JOURNAL OF ALLOYS AND COMPOUNDS, 1992, 190 (01) :L17-L18

[7] Doping of CuInSe2 Crystals: Evidence for Influence of Thermal Defects [J].

Cahen, David ;

Abecassis, Daniel ;

Soltz, David .

CHEMISTRY OF MATERIALS, 1989, 1 (02) :202-207

[8] STATISTICS OF NEAREST NEIGHBOR IMPURITY PAIR FORMATION IN SEMICONDUCTORS [J].

CHATTERJEA, A ;

HAUSER, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (11) :1031-1035

[9] NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].

CHEVALLIER, J ;

CLERJAUD, B ;

PAJOT, B .

SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510

[10] DONOR LEVEL OF INTERSTITIAL HYDROGEN IN GAP [J].

CLERJAUD, B ;

COTE, D ;

HAHN, WS ;

WASIK, D ;

ULRICI, W .

APPLIED PHYSICS LETTERS, 1992, 60 (19) :2374-2376

← 1 2 3 4 5 6 →