A STUDY OF REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS

被引：7

作者：

ALEXANDROV, SE ^{[1
]}

HITCHMAN, ML ^{[1
]}

SHAMLIAN, S ^{[1
]}

机构：

[1] ST PETERSBURG STATE TECH UNIV,DEPT ELECTR MAT TECHNOL,ST PETERSBURG 195251,RUSSIA

来源：

JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C3期

关键词：

D O I：

10.1051/jp4:1993331

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The growth of silicon nitride (Si-NxHy) films from SiH4 and N2 by capacitively coupled remote PECVD is described for the first time. The influence of process parameters on the growth rate, concentration of bonded hydrogen, and properties of deposited films is discussed. The most probable mechanism of film formation is proposed on the basis of the experimental results obtained.

引用

页码：233 / 240

页数：8

共 12 条

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