THE PREPARATION, PROPERTIES AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：73

作者：

GUPTA, M ^{[1
]}

RATHI, VK ^{[1
]}

THANGARAJ, R ^{[1
]}

AGNIHOTRI, OP ^{[1
]}

CHARI, KS ^{[1
]}

机构：

[1] DEPT ELECTR,DIV MICROELECTR DEV,NEW DELHI 110065,INDIA

来源：

THIN SOLID FILMS | 1991年 / 204卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90495-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The purpose of this paper is to review the preparation and characterization of thin films of silicon nitride deposited by the technique of plasma-enhanced chemical vapor deposition. The applications of silicon nitride thin films in integrated circuit technology are also reviewed. The paper also introduces the modifications to the plasma chemical vapor deposition system used to avoid plasma bombardment of the substrate and to reduce hydrogen incorporation in the layers in the form of Si-H and N-H bonds. The effect on film properties of post-deposition annealing at a temperature higher than the deposition temperature is reported.

引用

页码：77 / 106

页数：30

共 140 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

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