SEMICONDUCTOR ANALYSIS USING ORGANIC-ON-INORGANIC CONTACT BARRIERS .1. THEORY OF THE EFFECTS OF SURFACE-STATES ON DIODE POTENTIAL AND AC ADMITTANCE

被引：70

作者：

FORREST, SR ^{[1
]}

SCHMIDT, PH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.336662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：513 / 525

页数：13

共 26 条

[11] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
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KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[12] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DEVICES
FORREST, SR
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SCHMIDT, PH
FELDMANN, WL
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 90 - 93
[13] FORREST SR, UNPUB J APPL PHYS
[14] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES
HASEGAWA, H
SAWADA, T
[J]. THIN SOLID FILMS, 1983, 103 (1-2) : 119 - 140
[15] KAO KC, 1981, ELECTRICAL TRANSPORT
[16] MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACES
MARGARITONDO, G
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 499 - 513
[17] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
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GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
[18] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS
ROBERTS, GI
CROWELL, CR
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1767 - +
[19] INP MISFETS WITH AL2O3 NATIVE OXIDE DOUBLE-LAYER GATE INSULATORS
SAWADA, T
ITAGAKI, S
HASEGAWA, H
OHNO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1038 - 1043
[20] INTERFACE PROPERTIES OF AL-SIO2-IN0.53GA0.47AS MIS DEVICES
SHEN, CC
PANDE, KP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 314 - 315

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