VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAAS WITH THE ASCL3-GA-N2 SYSTEM

被引：11

作者：

LIN, LY

LIN, YW

ZHONG, XR

ZHANG, YY

LI, HL

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90452-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：344 / 349

页数：6

相关论文

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