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VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAAS WITH THE ASCL3-GA-N2 SYSTEM
被引:11
作者
:
LIN, LY
论文数:
0
引用数:
0
h-index:
0
LIN, LY
LIN, YW
论文数:
0
引用数:
0
h-index:
0
LIN, YW
ZHONG, XR
论文数:
0
引用数:
0
h-index:
0
ZHONG, XR
ZHANG, YY
论文数:
0
引用数:
0
h-index:
0
ZHANG, YY
LI, HL
论文数:
0
引用数:
0
h-index:
0
LI, HL
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1982年
/ 56卷
/ 02期
关键词
:
D O I
:
10.1016/0022-0248(82)90452-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:344 / 349
页数:6
相关论文
共 19 条
[1]
HIGH-PURITY EPITAXIAL GAAS
AOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN
AOKI, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(09)
: 1267
-
1271
[2]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
: 1041
-
1053
[3]
CHENG TJ, 1980, ANN REPORT SEMICONDU
[4]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
: 189
-
+
[5]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1823
-
+
[6]
VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE
IHARA, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, KAWASAKI, JAPAN
FUJITSU LABS LTD, KAWASAKI, JAPAN
IHARA, M
DAZAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, KAWASAKI, JAPAN
FUJITSU LABS LTD, KAWASAKI, JAPAN
DAZAI, K
RYUZAN, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, KAWASAKI, JAPAN
FUJITSU LABS LTD, KAWASAKI, JAPAN
RYUZAN, O
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(02)
: 528
-
531
[7]
PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
论文数:
0
引用数:
0
h-index:
0
KNIGHT, JR
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
EVANS, PR
论文数:
0
引用数:
0
h-index:
0
EVANS, PR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 178
-
&
[8]
LIN YW, 1980, ANN REPORT SEMICONDU
[9]
LU DH, COMMUNICATION
[10]
THERMODYNAMIC FACTOR INFLUENCING THE GROWTH-RATE AND PURITY OF EPITAXIAL LAYERS IN THE GA-ASCL3-H2 SYSTEM
MORIZANE, K
论文数:
0
引用数:
0
h-index:
0
MORIZANE, K
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 164
-
170
←
1
2
→
共 19 条
[1]
HIGH-PURITY EPITAXIAL GAAS
AOKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO 180, TOKYO, JAPAN
AOKI, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(09)
: 1267
-
1271
[2]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
: 1041
-
1053
[3]
CHENG TJ, 1980, ANN REPORT SEMICONDU
[4]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
: 189
-
+
[5]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1823
-
+
[6]
VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE
IHARA, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, KAWASAKI, JAPAN
FUJITSU LABS LTD, KAWASAKI, JAPAN
IHARA, M
DAZAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, KAWASAKI, JAPAN
FUJITSU LABS LTD, KAWASAKI, JAPAN
DAZAI, K
RYUZAN, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD, KAWASAKI, JAPAN
FUJITSU LABS LTD, KAWASAKI, JAPAN
RYUZAN, O
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(02)
: 528
-
531
[7]
PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
KNIGHT, JR
论文数:
0
引用数:
0
h-index:
0
KNIGHT, JR
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
EVANS, PR
论文数:
0
引用数:
0
h-index:
0
EVANS, PR
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 178
-
&
[8]
LIN YW, 1980, ANN REPORT SEMICONDU
[9]
LU DH, COMMUNICATION
[10]
THERMODYNAMIC FACTOR INFLUENCING THE GROWTH-RATE AND PURITY OF EPITAXIAL LAYERS IN THE GA-ASCL3-H2 SYSTEM
MORIZANE, K
论文数:
0
引用数:
0
h-index:
0
MORIZANE, K
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 164
-
170
←
1
2
→