DEEP LEVELS IN SEMICONDUCTING IN-ALLOYED BULK NORMAL-GAAS AND ITS RESISTIVITY CONVERSIONS BY THERMAL TREATMENTS

被引：7

作者：

KITAGAWARA, Y

NOTO, N

TAKAHASHI, T

TAKENAKA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.99525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：221 / 223

页数：3

共 11 条

[1] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J].

CHEN, RT ;

HOLMES, DE ;

ASBECK, PM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :459-461

[2]

FORD W, 1986, SEMIINSULATING 3 5 M, P227

[3] ELECTRICAL UNIFORMITY FOR SI-IMPLANTED LAYER OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS [J].

HYUGA, F ;

KOHDA, H ;

NAKANISHI, H ;

KOBAYASHI, T ;

HOSHIKAWA, K .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :620-622

[4] ELECTRON TRAPS IN DISLOCATION-FREE IN-ALLOYED LIQUID ENCAPSULATED CZOCHRALSKI GAAS AND THEIR ANNEALING PROPERTIES [J].

KITAGAWARA, Y ;

NOTO, N ;

TAKAHASHI, T ;

TAKENAKA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1664-1665

[5] INFRARED SPECTROPHOTOMETRY OF CARBON-INDUCED LOCALIZED VIBRATIONAL-MODE IN INDIUM-DOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].

KITAGAWARA, Y ;

ITOH, T ;

NOTO, N ;

TAKENAKA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :788-790

[6]

KITAGAWARA Y, 1986, SEMIINSULATING 3 5 M, P273

[7] SEMICONDUCTING SEMIINSULATING REVERSIBILITY IN BULK GAAS [J].

LOOK, DC ;

YU, PW ;

THEIS, WM ;

FORD, W ;

MATHUR, G ;

SIZELOVE, JR ;

LEE, DH ;

LI, SS .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1083-1085

[8] DEFECT NATURE OF THE 0.4-EV CENTER IN O-DOPED GAAS [J].

LOOK, DC ;

CHAUDHURI, S ;

SIZELOVE, JR .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :829-831

[9] REVERSIBLE ELECTRICAL-PROPERTIES OF LEC GAAS [J].

LOOK, DC ;

THEIS, WM ;

YU, PW ;

SIZELOVE, JR ;

FORD, W ;

MATHUR, G .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) :63-67

[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

← 1 2 →