SURFACE-DIFFUSION DURING MBE GROWTH OF GAAS-ALGAAS SINGLE QUANTUM WELLS ON VICINAL SURFACES

被引：13

作者：

KANAMOTO, K

FUJIWARA, K

TOKUDA, Y

TSUKADA, N

ISHII, M

NAKAYAMA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90400-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：273 / 276

页数：4

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[2] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES
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[4] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE
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[5] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS
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[6] THEORETICAL-STUDY OF MODE TRANSITION BETWEEN 2D-NUCLEATION AND STEP FLOW IN MBE GROWTH OF GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L12 - L14
[7] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY
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[8] EXTRINSIC EFFECTS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS FROM MBE GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 243 - 248
[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENT OF SURFACE-DIFFUSION DURING THE GROWTH OF GALLIUM-ARSENIDE BY MBE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 13 - 18
[10] MOBILITY ANISOTROPY AND MAGNETORESISTANCE AT AN (INAS)1(GAAS)1-INP HETEROINTERFACE GROWN ON A (001) VICINAL INP SUBSTRATE
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FUKUI, T
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 960 - 963