OPTICAL STUDY OF HIGH-DOSE IMPLANTED, LASER ANNEALED SILICON

被引：1

作者：

BORGHESI, A ^{[1
]}

GUIZZETTI, G ^{[1
]}

NOSENZO, L ^{[1
]}

STELLA, A ^{[1
]}

CAMPISANO, SU ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] UNIV CATANIA, DEPARTIMENTO FIS, I-95129 CATANIA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80116-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：582 / 584

页数：3

共 12 条

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[8] CHANGE OF THE ELECTRON EFFECTIVE MASS IN EXTREMELY HEAVILY DOPED NORMAL-TYPE SI OBTAINED BY ION-IMPLANTATION AND LASER ANNEALING [J].

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[9] ELECTRONIC-STRUCTURE AND SPECTRA OF HEAVILY DOPED NORMAL-TYPE SILICON [J].

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[10] OPTICAL EFFECTIVE MASS OF HIGH-DENSITY CARRIERS IN SILICON [J].

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