EVIDENCE OF 2 BI SITES FROM ELECTRON-PARAMAGNETIC-RES OF MN-2+ IN BI-DOPED AMORPHOUS-GERMANIUM CHALCOGENIDES

被引：15

作者：

BHATIA, KL ^{[1
]}

GOSAIN, DP ^{[1
]}

BHATNAGAR, VK ^{[1
]}

机构：

[1] MAHARSHI DAYANAND UNIV,DEPT PHYS,ROHTAK 124001,INDIA

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.35.4503

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4503 / 4506

页数：4

共 18 条

[1] STRUCTURAL-PROPERTIES OF DOPED NORMAL-TYPE AMORPHOUS (GESE3.5)100-XBIX [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARASTHY, G ;

GOPAL, EST ;

SHARMA, AK .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (02) :181-182

[2] STRUCTURAL-CHANGES INDUCED BY BI DOPING IN N-TYPE AMORPHOUS (GESE3.5)100-XBIX [J].

BHATIA, KL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :173-177

[3] ON THE STRUCTURAL FEATURES OF DOPED AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 86 (1-2) :65-71

[4] BISMUTH-DOPED AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARATHY, G ;

GOPAL, ESR .

PHYSICAL REVIEW B, 1986, 34 (12) :8786-8793

[5]

BHATIA KL, 1983, J NON-CRYST SOLIDS, V58, P151

[6] PRESSURE-INDUCED EFFECTS IN BULK AMORPHOUS N-TYPE SEMICONDUCTORS (GESE3.5)100-XBIX [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 69 (2-3) :189-202

[7] STUDY OF EFFECTS OF DOPANTS ON STRUCTURE OF VITREOUS SEMICONDUCTORS (GESE3.5)100-XMX (M = BI, SB) USING HIGH-PRESSURE TECHNIQUES [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR ;

SHARMA, AK .

SOLID STATE COMMUNICATIONS, 1984, 51 (09) :739-742

[8] ROLE OF DOPANTS IN PRESSURE-INDUCED EFFECTS IN GLASSY GESE3.5 CONTAINING BI AND SB [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOSAIN, DP ;

GOPAL, ESR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (06) :L63-L68

[9] ELECTRICAL TRANSPORT IN BI DOPED N-TYPE AMORPHOUS-SEMICONDUCTORS (GESE3.5)100-XBIX AT HIGH-PRESSURE [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1019-1021

[10] OPTICAL-CONSTANTS OF DOPED N-TYPE VITREOUS SEMICONDUCTORS (GESE3.5)100-XBIX [J].

BHATIA, KL ;

SHARMA, AK .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 81 (03) :285-291

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