NON-ALLOYED OHMIC CONTACTS ON P-GAAS AND P-GAALAS USING MO-CVD CONTACT LAYERS

被引：7

作者：

ESCOBOSA, A

KRAUTLE, H

BENEKING, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90456-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：376 / 381

页数：6

共 11 条

[1]

ALFEROV ZI, 1976, SOV PHYS-TECH PHYS, V20, P1617

[2] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[3] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J].

BENEKING, H ;

ESCOBOSA, A ;

KRAUTLE, H .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :473-480

[4] LOW RESISTANCE OHMIC CONTACTS TO NORMAL-INP AND PARA-INP [J].

KUPHAL, E .

SOLID-STATE ELECTRONICS, 1981, 24 (01) :69-&

[5] BEAM-LEAD TECHNOLOGY [J].

LEPSELTE.MP .

BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02) :233-&

[6] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176

[7] ALLOYING OF GOLD AND GOLD ALLOY OHMIC CONTACT METALLIZATIONS WITH GALLIUM-ARSENIDE [J].

MILLER, DC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :467-475

[8] NON-ALLOYED OHMIC CONTACTS TO N-GAAS BY PULSE-ELECTRON-BEAM-ANNEALED SELENIUM IMPLANTS [J].

MOZZI, RL ;

FABIAN, W ;

PIEKARSKI, FJ .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :337-339

[9] LASER ANNEALING OF OHMIC CONTACTS ON GAAS [J].

ORABY, AH ;

MURAKAMI, K ;

YUBA, Y ;

GAMO, K ;

NAMBA, S ;

MASUDA, Y .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :562-564

[10] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

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