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EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY
被引:46
作者
:
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
PALMSTROM, CJ
[
1
]
FIMLAND, BO
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
FIMLAND, BO
[
1
]
SANDS, T
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
SANDS, T
[
1
]
GARRISON, KC
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
GARRISON, KC
[
1
]
BARTYNSKI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
BARTYNSKI, RA
[
1
]
机构
:
[1]
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
来源
:
JOURNAL OF APPLIED PHYSICS
|
1989年
/ 65卷
/ 12期
关键词
:
D O I
:
10.1063/1.343228
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4753 / 4758
页数:6
相关论文
共 40 条
[11]
GROWTH OF ALPHA-RH2AS ON GAAS(001) IN A MOLECULAR-BEAM EPITAXY SYSTEM
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
GUIVARCH, A
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
SECOUE, M
GUENAIS, B
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
GUENAIS, B
BALLINI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
BALLINI, Y
BADOZ, PA
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
BADOZ, PA
ROSENCHER, E
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
ROSENCHER, E
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(02)
: 683
-
687
[12]
GROWTH OF RHGA ON GAAS (001) IN A MOLECULAR-BEAM EPITAXY SYSTEM
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
SECOUE, M
GUENAIS, B
论文数:
0
引用数:
0
h-index:
0
GUENAIS, B
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(12)
: 948
-
950
[13]
EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001)
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
GUERIN, R
论文数:
0
引用数:
0
h-index:
0
GUERIN, R
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
SECOUE, M
[J].
ELECTRONICS LETTERS,
1987,
23
(19)
: 1004
-
1005
[14]
GROWTH OF NI3GA2, NIGA AND NI2GA3 ON GAAS (001) AND (111) IN A MOLECULAR-BEAM EPITAXY SYSTEM
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
CAULET, J
论文数:
0
引用数:
0
h-index:
0
CAULET, J
GUENAIS, B
论文数:
0
引用数:
0
h-index:
0
GUENAIS, B
BALLINI, Y
论文数:
0
引用数:
0
h-index:
0
BALLINI, Y
GUERIN, R
论文数:
0
引用数:
0
h-index:
0
GUERIN, R
POUDOULEC, A
论文数:
0
引用数:
0
h-index:
0
POUDOULEC, A
REGRENY, A
论文数:
0
引用数:
0
h-index:
0
REGRENY, A
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
95
(1-4)
: 427
-
430
[15]
GUIVARCH A, IN PRESS J APPL PHYS
[16]
MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES
HARBISON, JP
论文数:
0
引用数:
0
h-index:
0
HARBISON, JP
SANDS, T
论文数:
0
引用数:
0
h-index:
0
SANDS, T
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
TABATABAIE, N
CHAN, WK
论文数:
0
引用数:
0
h-index:
0
CHAN, WK
FLOREZ, LT
论文数:
0
引用数:
0
h-index:
0
FLOREZ, LT
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(18)
: 1717
-
1719
[17]
The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces
Lince, Jeffrey R.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
Lince, Jeffrey R.
Tsai, C. Thomas
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
Tsai, C. Thomas
Williams, R. Stanley
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
Williams, R. Stanley
[J].
JOURNAL OF MATERIALS RESEARCH,
1986,
1
(04)
: 537
-
542
[18]
MASSIES J, 1980, THIN SOLID FILMS, V90, P113
[19]
Schottky-barrier height determination in the presence of interfacial disorder
McLean, A. B.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
McLean, A. B.
Dharmadasa, I. M.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Dharmadasa, I. M.
Williams, R. H.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Williams, R. H.
[J].
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1986,
1
(02)
: 137
-
142
[20]
WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY
MICHAELSON, HB
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ARMONK, NY 10504 USA
IBM CORP, ARMONK, NY 10504 USA
MICHAELSON, HB
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(11)
: 4729
-
4733
←
1
2
3
4
→
共 40 条
[11]
GROWTH OF ALPHA-RH2AS ON GAAS(001) IN A MOLECULAR-BEAM EPITAXY SYSTEM
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
GUIVARCH, A
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
SECOUE, M
GUENAIS, B
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
GUENAIS, B
BALLINI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
BALLINI, Y
BADOZ, PA
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
BADOZ, PA
ROSENCHER, E
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE
ROSENCHER, E
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(02)
: 683
-
687
[12]
GROWTH OF RHGA ON GAAS (001) IN A MOLECULAR-BEAM EPITAXY SYSTEM
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
SECOUE, M
GUENAIS, B
论文数:
0
引用数:
0
h-index:
0
GUENAIS, B
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(12)
: 948
-
950
[13]
EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001)
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
GUERIN, R
论文数:
0
引用数:
0
h-index:
0
GUERIN, R
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
SECOUE, M
[J].
ELECTRONICS LETTERS,
1987,
23
(19)
: 1004
-
1005
[14]
GROWTH OF NI3GA2, NIGA AND NI2GA3 ON GAAS (001) AND (111) IN A MOLECULAR-BEAM EPITAXY SYSTEM
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
CAULET, J
论文数:
0
引用数:
0
h-index:
0
CAULET, J
GUENAIS, B
论文数:
0
引用数:
0
h-index:
0
GUENAIS, B
BALLINI, Y
论文数:
0
引用数:
0
h-index:
0
BALLINI, Y
GUERIN, R
论文数:
0
引用数:
0
h-index:
0
GUERIN, R
POUDOULEC, A
论文数:
0
引用数:
0
h-index:
0
POUDOULEC, A
REGRENY, A
论文数:
0
引用数:
0
h-index:
0
REGRENY, A
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
95
(1-4)
: 427
-
430
[15]
GUIVARCH A, IN PRESS J APPL PHYS
[16]
MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES
HARBISON, JP
论文数:
0
引用数:
0
h-index:
0
HARBISON, JP
SANDS, T
论文数:
0
引用数:
0
h-index:
0
SANDS, T
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
TABATABAIE, N
CHAN, WK
论文数:
0
引用数:
0
h-index:
0
CHAN, WK
FLOREZ, LT
论文数:
0
引用数:
0
h-index:
0
FLOREZ, LT
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(18)
: 1717
-
1719
[17]
The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces
Lince, Jeffrey R.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
Lince, Jeffrey R.
Tsai, C. Thomas
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
Tsai, C. Thomas
Williams, R. Stanley
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA
Williams, R. Stanley
[J].
JOURNAL OF MATERIALS RESEARCH,
1986,
1
(04)
: 537
-
542
[18]
MASSIES J, 1980, THIN SOLID FILMS, V90, P113
[19]
Schottky-barrier height determination in the presence of interfacial disorder
McLean, A. B.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
McLean, A. B.
Dharmadasa, I. M.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Dharmadasa, I. M.
Williams, R. H.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Univ Coll, Dept Phys, Cardiff CF1 1XL, S Glam, Wales
Williams, R. H.
[J].
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1986,
1
(02)
: 137
-
142
[20]
WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY
MICHAELSON, HB
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ARMONK, NY 10504 USA
IBM CORP, ARMONK, NY 10504 USA
MICHAELSON, HB
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(11)
: 4729
-
4733
←
1
2
3
4
→