CHEMICAL ETCHING OF INGAASP/INP DH WAFER

[11] TRANSVERSE-MODE STABILIZED ALGAAS-GAAS PLANO-CONVEX WAVE-GUIDE LASER MADE BY A SINGLE-STEP LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 121 - 123

[12] IGA K, 1980, ELECTRON LETT, V16, P831, DOI 10.1049/el:19800590

[13] GAINASP-INP DH LASERS WITH A CHEMICALLY ETCHED FACET [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (10) : 1044 - 1047

[14] EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 628 - 631

[15] CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 79 - 85

[16] KIRBY PA, 1976, J APPL PHYS, V47, P4578

[17] ETCHING OF ALXGA1-XAS IN ALKALINE SOLUTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (04) : 619 - 620

[18] LIMITS IN INTEGRATED-OPTICS [J]. PROCEEDINGS OF THE IEEE, 1981, 69 (02) : 232 - 238

[19] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &

[20] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176

[11] TRANSVERSE-MODE STABILIZED ALGAAS-GAAS PLANO-CONVEX WAVE-GUIDE LASER MADE BY A SINGLE-STEP LIQUID-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 121 - 123

[12] IGA K, 1980, ELECTRON LETT, V16, P831, DOI 10.1049/el:19800590

[13] GAINASP-INP DH LASERS WITH A CHEMICALLY ETCHED FACET [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (10) : 1044 - 1047

[14] EMBEDDED-STRIPE GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH POLYCRYSTALLINE GAASP LAYERS .2. LASERS WITH ETCHED MIRRORS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 628 - 631

[15] CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 79 - 85

[16] KIRBY PA, 1976, J APPL PHYS, V47, P4578

[17] ETCHING OF ALXGA1-XAS IN ALKALINE SOLUTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (04) : 619 - 620

[18] LIMITS IN INTEGRATED-OPTICS [J]. PROCEEDINGS OF THE IEEE, 1981, 69 (02) : 232 - 238

[19] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &

[20] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176