CHEMICAL ETCHING OF INGAASP/INP DH WAFER

被引：54

作者：

ADACHI, S

NOGUCHI, Y

KAWAGUCHI, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 05期

关键词：

D O I：

10.1149/1.2124014

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1053 / 1062

页数：10

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共 42 条

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[32] BURIED CONVEX WAVE-GUIDE STRUCTURE (GAAL) AS INJECTION-LASERS
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[36] MONOLITHIC PASSIVATED STRIPE GEOMETRY DOUBLE HETEROSTRUCTURE INJECTION-LASERS BY SELECTIVE CHEMICAL ETCHING
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[38] LOW-CURRENT-THRESHOLD STRIP-BURIED-HETEROSTRUCTURE LASERS WITH SELF-ALIGNED CURRENT INJECTION STRIPES
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 644 - 647
[39] LATERAL CURRENT CONFINEMENT BY REVERSE-BIASED JUNCTIONS IN GAAS-ALXGA1-XAS DH LASERS
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[J]. APPLIED PHYSICS LETTERS, 1977, 30 (10) : 538 - 540
[40] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS
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