EFFECTS OF HIGH-TEMPERATURE ANNEALING ON MNOS DEVICES

被引：19

作者：

TOPICH, JA ^{[1
]}

YON, ET ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106

来源：

关键词：

D O I：

10.1149/1.2132872

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：535 / 539

页数：5

共 20 条

[1] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[2] CARLSTEDT G, 1972, J SOLID STATE CIRCUI, V7, P382
[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &
[4] HU SM, 1966, J ELECTROCHEM SOC, V113, P696
[5] CONDUCTION PROCESSES IN SILICON NITRIDE
KENDALL, EJM
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (22) : 2509 - &
[6] REMOVAL OF MEMORY PROPERTIES OF MNOS DEVICES
KENDALL, EJM
HASLETT, JW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 287 - &
[7] DISCHARGE OF MNOS STRUCTURES
LUNDKVIST, L
LUNDSTROM, I
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 811 - +
[8] LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826
[9] Pulver M., 1970, Physica Status Solidi A, V1, P65, DOI 10.1002/pssa.19700010108
[10] ROSS EC, 1970, RCA REV, V31, P467