CVD-BN FOR BORON-DIFFUSION IN SI AND ITS APPLICATION TO SI DEVICES

被引：53

作者：

HIRAYAMA, M ^{[1
]}

SHOHNO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECTR,CHIYODA 102,TOKYO,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 12期

关键词：

D O I：

10.1149/1.2134107

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1671 / 1676

页数：6

相关论文

共 18 条

[1] INTERFACE REACTION OF B2O3-SI SYSTEM AND BORON DIFFUSION INTO SILICON
ARAI, E
TERUNUMA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 980 - 987
[2] INFRA-RED SPECTRA OF INORGANIC SOLIDS .2. OXIDES, NITRIDES, CARBIDES, AND BORIDES
BRAME, EG
MARGRAVE, JL
MELOCHE, VW
[J]. JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1957, 5 (01): : 48 - 52
[3] GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
KENNICOTT, PR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +
[4] CHARGE STORAGE PHENOMENA IN AL-GAMMA-AL2O3-SIO2-SI STRUCTURES
CHOU, NJ
TSANG, PJ
[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 659 - &
[5] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
CORBETT, JW
WATKINS, GD
CHRENKO, RM
MCDONALD, RS
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[6] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[7] INFRARED ABSORPTION OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972
[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[9] KENNEDY, 1966, IBM J RES DEV, V10, P213
[10] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .2. FILM PROPERTIES
KERN, W
HEIM, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 568 - &